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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD897 DESCRIPTION *High Breakdown Voltage: VCBO= 1500V (Min) *High Switching Speed *Low Collector Saturation Voltage: VCE(sat)= 5.0V(Max.)@ IC= 1A *Built-in Damper Diode APPLICATIONS *Designed for use in color TV deflection circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage VALUE 1500 600 6 UNIT V Collector Current- Continuous Collector Current- Peak Base Current- Continuous w w scs .i w 1.5 5.0 0.8 50 150 -65~150 V V .cn mi e A A A PC TJ Tstg Collector Power Dissipation @ TC= 25 Junction Temperature Storage Temperature Range W THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.5 UNIT /W isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD897 MAX UNIT VEBO Emitter-Base Breakdown Voltage IE= 200mA; IC= 0 6.0 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 1A; IB= 0.2A B 1.5 V ICES Collector Cutoff Current VCE= 1500V; RBE= 0 500 A hFE DC Current Gain IC= 0.5A; VCE= 5V VECF C-E Diode Forward Voltage IF= 2A fT Current-Gain--Bandwidth Product tf Fall Time w w. w IC= 0.1A; VCE= 10V IC= 0.8A, IB1(end)= 0.16A .cn mi cse is 8 2.5 V 3 MHz 1.0 s isc Websitewww.iscsemi.cn 2 |
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